Impact of Bias Temperature Instability on Soft Error Susceptibility
نویسندگان
چکیده
منابع مشابه
Does Negative Bias Temperature Instability Affect the Soft Error Rate of SRAMs?
Integrated circuits operating in space must withstand a harsh radiation environment [1], but, at the same time, they are subjected to the same intrinsic degradation mechanisms that are present on Earth. Aging of MOSFETs is one of the hottest topics in CMOS research. In fact, due to the ever increasing electric field, the reliability margin of modern devices is rapidly decreasing [2]. Negative B...
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Negative Bias Temperature Instability(NBTI) has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. As the Integrated Circuits (IC) density keeps on increasing with the scaling of CMOS devices in each successive technology generation, stress analysis or reliability concerns mainly Negative Bias ...
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After its discovery nearly forty years ago, negative bias temperature instability (NBTI) has again moved to the center of scientific attention as a significant reliability concern for highly scaled pMOSFETs. 3 The concern stems from the large number of unsaturated dangling bonds (Pb centers ) at the Si/SiO2 interface, which have to be passivated in order to avoid trapping levels in the bandgap....
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This paper reviews the experimental and modeling efforts to understand the mechanism of Negative Bias Temperature Instability (NBTI) in p-MOSFETs, which is becoming a serious reliability concern for analog and digital CMOS circuits. Conditions for interface and bulk trap generation and their dependence on stress voltage and oxide field, temperature and time are discussed. The role of inversion ...
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In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance. The differences appear fundamental: one model holds that NBTI is a diffusion-limited process and the other holds that it is reaction-limited. Basic issues of disagreement are summariz...
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ژورنال
عنوان ژورنال: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
سال: 2015
ISSN: 1063-8210,1557-9999
DOI: 10.1109/tvlsi.2014.2320307